- hetero-epitaxial
- гетероэпитаксиальный
English-Russian dictionary of microelectronics. 2014.
hetero-epitaxial
Смотреть что такое "hetero-epitaxial" в других словарях:
hetero-epitaxial diode — įvairialytis epitaksinis diodas statusas T sritis radioelektronika atitikmenys: angl. hetero epitaxial diode vok. heteroepitaxiale Diode, f rus. гетероэпитаксиальный диод, m pranc. diode hétéro épitaxiale, f … Radioelektronikos terminų žodynas
diode hétéro-épitaxiale — įvairialytis epitaksinis diodas statusas T sritis radioelektronika atitikmenys: angl. hetero epitaxial diode vok. heteroepitaxiale Diode, f rus. гетероэпитаксиальный диод, m pranc. diode hétéro épitaxiale, f … Radioelektronikos terminų žodynas
Silicon on sapphire — (SOS) is a hetero epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of… … Wikipedia
heteroepitaxiale Diode — įvairialytis epitaksinis diodas statusas T sritis radioelektronika atitikmenys: angl. hetero epitaxial diode vok. heteroepitaxiale Diode, f rus. гетероэпитаксиальный диод, m pranc. diode hétéro épitaxiale, f … Radioelektronikos terminų žodynas
įvairialytis epitaksinis diodas — statusas T sritis radioelektronika atitikmenys: angl. hetero epitaxial diode vok. heteroepitaxiale Diode, f rus. гетероэпитаксиальный диод, m pranc. diode hétéro épitaxiale, f … Radioelektronikos terminų žodynas
гетероэпитаксиальный диод — įvairialytis epitaksinis diodas statusas T sritis radioelektronika atitikmenys: angl. hetero epitaxial diode vok. heteroepitaxiale Diode, f rus. гетероэпитаксиальный диод, m pranc. diode hétéro épitaxiale, f … Radioelektronikos terminų žodynas
Stranski-Krastanov growth — (SK growth, also Stransky Krastanov or Stranski Krastanow) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as layer plus island growth , the SK mode follows a two step process:… … Wikipedia
Michael Francis Tompsett — is a British born physicist and former researcher at English Electric Valve Company, [1] who later moved to Bell Labs in America. He is best known as the inventor of Charge Coupled Device (CCD) Imagers used for imaging in devices such as digital… … Wikipedia
